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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD329 DESCRIPTION *DC Current Gain: hFE= 85~375(Min)@ IC= 0.5A *Collector-Emitter Sustaining Voltage : VCEO(SUS)= 20V(Min) *Complement to type BD330 APPLICATIONS *Especially for battery equipped applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC IBM PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VALUE 32 UNIT V Collector Current-Continuous Base Current-Peak w w scs .i w 20 5 3 1 15 150 -65~150 V V .cn mi e A A Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range W THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 7 100 UNIT /W /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BD329 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 20 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 0.5 V VBE(on)-1 Base-Emitter On Voltage IC= 5mA; VCE= 10V 0.6 V VBE(on)-2 Base-Emitter On Voltage IC= 2A; VCE= 1V VCB= 32V; IE= 0 VCB= 32V; IE= 0,TC=150 VEB= 5V; IC= 0 1.2 0.1 10 0.1 V A ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 DC Current Gain hFE-3 DC Current Gain fT Current-Gain--Bandwidth Product w w scs .i w IC= 5mA; VCE= 10V IC= 0.5A; VCE= 1V IC= 2A; VCE= 1V .cn mi e 50 85 40 130 A 375 IC= 50mA; VCE= 5V; ftest= 100MHz MHz isc Websitewww.iscsemi.cn 2 |
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